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LightSmyth光栅
Lightsmyth成立于2000年,致力于纳米产品的开发创新。2007年,lightsmyth的高性能衍射光栅在光通信、国防和生物科技市场中获得市场认可。直到今天,lightsmyth所提供的超过100多种优化的光栅产品广泛应用于各种领域。lightsmyth产品和创新是围绕全息衍射原理,通过结合先进的半导体模型工具如深紫外线(DUV)步进电机制造中的应用/扫描仪进行生产制造。
Lightsmyth是纳米光子学创新产品开发的领导者。创新包括超高效率的偏振不敏感光栅的电信产品线,硅基板等超低散射高质量功能先进的衍射光栅。
LightSmyth熔融石英和高强度介电薄膜生产透射光栅,采用业界当前先进投影光刻基板和和反应性离子蚀刻技术。这种高保真半导体制造方法使用专有衍射光栅设计,实现效率精确接近100%,线间距控制到百万分之一。综合量产制造的成本效益考虑,没有其他的光栅技术能够达到lightsmyth这种程度的性能。正因为对设计和技术的不懈追求,LightSmyth的光栅具有很宽的波长范围,并且可以调整入射角进一步得到更高性能。
高宽带高衍射效率
低偏振灵敏度
功能卓越,均匀刻线槽
仅采用熔融石英和高强度电介质,无聚合物
非常高的环境稳定性,通过Tellcordia质量认证
每个光栅均为母光栅:低散射,无重影
大的通光区域:直径可达140毫米
非常有竞争力的价格
严格的质量控制:通过ISO9001:2008质量体系认证
高级透射光栅(电信)-光通信高效率偏振无关透射光栅
透射光栅是使透射光形成光谱的光栅。LightSmyth高性价比透射光栅采用业界先进的设计和精确的光刻晶圆级制造技术,光学性能与低成本不断刷新纪录,为您的光学系统提供强大的竞争优势。高衍射效率,低PDL和极具竞争力的价格为您提供世界上高性价比的透射光栅。
Description |
T-940-C |
T-966-C |
T-940-L |
T-940-CL |
Units |
Groove Density |
940.07 |
966.2 |
940.07 |
940.07 |
grooves/mm |
Operational Wavelength Range |
1526-1566
(C band) |
1526-1566
(C band) |
1570-1610
(L band) |
1526-1610
(C+L band) |
nm |
Optimum Incidence Angle |
46.5 |
48.3 |
48.4 |
47.5 |
degrees |
Groove Density Uniformity |
0.001 |
0.001 |
0.001 |
0.001 |
grooves/mm |
Diffraction Efficiency (s- and p-polarization) |
> 94 |
> 94 |
> 94 |
> 92 |
% |
Polarization Dependent Loss |
< 0.2 |
< 0.2 |
< 0.2 |
< 0.25 |
dB |
Spectral Non-Uniformity |
< 0.15 |
< 0.15 |
< 0.15 |
< 0.25 |
dB |
Spatial PDL Non-Uniformity |
< 0.1 |
< 0.1 |
< 0.1 |
< 0.1 |
dB |
Type |
Substrate Size |
Clear Aperture |
Part Number |
C band, 940 grooves/mm |
24 × 9 mm |
23 × 8 mm |
T-940C-2409-94 |
|
24 × 14 mm |
23 × 13 mm |
T-940C-2414-94 |
C band, 966 grooves/mm |
16 × 10 mm |
15 × 9 mm |
T-966C-1610-94 |
|
27 × 10 mm |
26 × 9 mm |
T-966-C-2710-94 |
|
24 × 16.4 mm |
23 × 15.4 mm |
T-966C-24x16.4-94 |
L band, 940 grooves/mm |
27.4 × 10 mm |
26.4 × 9 mm |
T-940L-2710-94 |
C+L band, 940 grooves/mm |
27.4 × 10 mm |
26.4 × 9 mm |
T-940CL-2710-92 |
高级反射光栅(电信)
LightSmyth使用电信级偏振分集光学设计和激光频率稳定技术生产高效率反射光栅。采用投影光刻和反应性离子蚀刻技术在硅单晶基底上金属化,以实现单极化的高效性能。每个光栅均设计为母光栅,而不是复制光栅,达到低散射光和持久性能目标。
- 单极化超高效率
- 采用高强度介电材料,不使用聚合物
- 每个光栅均是超低散射母光栅
- 高竞争力价格,Telcordia质量认证
Line Density |
Size |
Performance Grade |
Part Number |
1200 lines/mm |
12.5 × 12.5 mm |
High |
SLG-C12-1212A-Au-HP |
|
25 × 25 mm |
High |
SLG-C12-2525A-Au-HP |
标准反射光栅
- 每块光栅都是高性能的母板,不使用聚合物
- 超低成本(低于复制光栅)
- 免费复制/缺陷检测核定;超低散射
- 高强度单晶硅基板
- 近似于铜的热导率
- 高硼硅玻璃,减少热膨胀
Line Density
(lines/mm) |
λPE 1 |
Size |
Part number |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
12.5 mm × 12.5 mm |
SLG-C12-1212A-Al |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
25 mm × 25 mm |
SLG-C12-2525A-Al |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
50 mm × 30 mm 2 |
SLG-C12-5030A-Al |
1800 |
390 nm (s), 660 nm to 1.0 μm (p) |
20 mm × 9 mm 2 |
SLG-C18-2009A-Al |
2400 |
300 nm (s),430 nm to 780 nm(p) |
12.5 mm × 12.5 mm |
SLG-C24-1212A-Al |
3600 |
240 nm (s), 480 nm (p) |
12.5 mm × 12.5 mm |
SLG-C36-1212A-Al |
X射线和深紫外光栅列表
Line Density
(lines/mm) |
Groove depth |
Size |
Part number |
7200 |
50 nm |
12.5 mm × 12.5 mm |
SLG-C72-1212A-Au |
7200 |
50 nm |
25 mm × 25 mm |
SLG-C72-2525A-Au |
7200 |
50 nm |
50 mm × 50 mm |
SLG-C72-5050A-Au |
脉冲压缩透射光栅
脉冲压缩光栅重要的性质是衍射效率高和低的波前变形,面向光栅的多通使用要求。激光脉冲压缩传输光栅基于LightSmyth破纪录的透射光栅平台。优化的线性P-偏振衍射效率在94%以上,它可以让我们的客户小化系统光学损耗,尤其面向高能激光器。
优点
- 对指定的偏振有特殊的衍射效率
- 宽带和低角度的敏感性特殊设计
- 超抛光石英基底使波前变形小化
- 使用熔融石英和高可靠介电材料
- 不使用聚合物或有机材料
- 每个光栅均为超低散射母光栅
Description |
LSFSG-1000 |
T-1200-850 |
T-1500-875 |
T-1850-915s |
T-1850-970s |
T-1600-976s |
T-1600-1060s |
Units |
Line Density |
1000 |
1208.46 |
1503.76 |
1851.851 |
1851.851 |
1600 |
1600 |
l/mm |
Operational Wavelength Range |
1040±20 |
850±20 |
875±20 |
915±10 |
970±10 |
976±10 |
1060±20 |
nm |
Optimum Angle of Incidence |
31.0 ± 1 |
30.7 ±1 |
41.0 ±1 |
57.9±1 |
63.9±1 |
51.3±1 |
58.0±1 |
° |
Line Density Uniformity (within grating) |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
l/mm |
Optimal Polarization |
any |
any |
any |
S- |
S- |
S- |
S- |
nm |
Diffraction Efficiency |
> 94 |
> 94 |
> 94 |
> 93 |
> 93 |
> 94 |
> 94 |
% |
Line Density |
Wavelength, Polarization |
Substrate Size 1, 2 |
Part Number |
1000 lines/mm |
1040 nm, any |
31.8 × 12.3 mm |
LSFSG-1000-3212-94 |
|
|
31.8 × 24.8 mm |
LSFSG-1000-3225-94 |
|
|
130.0 × 12.3 mm |
LSFSG-1000-13012-94 |
|
|
130.0 × 20 mm |
LSFSG-1000-13020-94 |
|
|
up to 135 mm diameter |
LSFSG-1000-cust |
1200 lines/mm |
850 nm, any |
21.65 × 15.9 mm |
T-1200-850-2216-94 |
|
|
130.0 × 12.3 mm |
T-1200-850-13012-94 |
|
|
130.0 × 20 mm |
T-1200-850-13020-94 |
|
|
up to 135 mm diameter |
T-1200-850-cust |
1500 lines/mm |
875 nm, any |
24.8 × 15.9 mm |
T-1500-875-2516-94 |
|
|
130.0 × 12.3 mm |
T-1500-875-13012-94 |
|
|
130.0 × 20 mm |
T-1500-875-13020-94 |
|
|
up to 135 mm diameter |
T-1500-875-cust |
1850 lines/mm |
915 nm, S |
31.8 × 10.0 mm |
T-1850-915s-3210-93 |
|
|
31.8 × 20.2 mm |
T-1850-915s-3220-93 |
|
|
130.0 × 10.0 mm |
T-1850-915s-13010-93 |
|
|
130.0 × 20.2 mm |
T-1850-915s-13020-93 |
|
|
up to 135 mm diameter |
T-1850-915s-cust |
1850 lines/mm |
970 nm, S |
31.8 × 10.0 mm |
T-1850-970s-3210-93 |
|
|
31.8 × 20.2 mm |
T-1850-970s-3220-93 |
|
|
130.0 × 10.0 mm |
T-1850-970s-13010-93 |
|
|
130.0 × 20.2 mm |
T-1850-970s-13020-93 |
|
|
up to 135 mm diameter |
T-1850-970s-cust |
1600 lines/mm |
976 nm, S |
31.8 × 12.3 mm |
T-1600-976s-3212-94 |
|
|
40 × 10 mm |
T-1600-976s-4010-94 |
|
|
31.8 × 24.8 mm |
T-1600-976s-3225-94 |
|
|
130.0 × 12.3 mm |
T-1600-976s-13012-94 |
|
|
130.0 × 20 mm |
T-1600-976s-13020-94 |
|
|
up to 135 mm diameter |
T-1600-976s-cust |
1600 lines/mm |
1060 nm, S |
31.8 × 12.3 mm |
T-1600-1060s-3212-94 |
|
|
31.8 × 24.8 mm |
T-1600-1060s-3225-94 |
|
|
130.0 × 10 mm |
T-1600-1060s-13010-94 |
|
|
130.0 × 20 mm |
T-1600-1060s-13020-94 |
|
|
up to 135 mm diameter |
T-1600-1060s-cust |
Nanopatterned Silicon Stamps
LightSmyth提供种类繁多的纳米制造单结晶硅基底,为纳米光子学研究行业和学术机构提供了一个低成本应用的方案。可用于各种应用在光学、光子学、生物学、化学、物理学(如中子散射)、高分子材料研究、纳米、微流体和其他的基板。如果需要的话,可以在基板进行金属或介电材料镀膜。大多数截面型材的表面特征略呈梯形,有直线平行的台地和沟槽以及格状结构。可提供多种特征尺寸和沟槽深度。基板的SEM图像,可以在装运之前进行更新的确认。
Description |
Value |
Clear Aperture (CA) |
0.5 mm from substrate edge (the pattern may extend to the edge of the substrate) |
|
Substrate Thickness |
0.675 ± 0.050 mm |
Surface Quality in CA |
P/N ends with "-P": 60/40 scratch/dig: 0.06 mm maximum scratch width, 0.4 mm maximum dig diameter. up to 20/10 specification may be provided at a premium |
Surface Quality in CA |
P/N ends with "-S": Discounted grade due to surface quality. Has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present |
Surface Quality outside of CA |
no requirements |
Material |
Single crystal silicon, reactive ion etch |
线性纳米结构
Period |
Groove depth |
Duty cycle 1 |
Line width 2 |
Size 3 |
Part number |
139 nm |
50 nm |
50% |
69.5 nm |
12.5×12.5×0.7 mm |
SNS-C72-1212-50-P |
139 nm |
50 nm |
50% |
69.5 nm |
25×25×0.7 mm |
SNS-C72-2525-50-P |
278 nm |
110 nm |
50% |
139 nm |
12.5×12.5×0.7 mm |
SNS-C36-1212-110-S |
416.6 nm |
110 nm |
50% |
208 nm |
12.5×12.5×0.7 mm |
SNS-C24-1212-110-P |
500 nm |
multiple |
44% |
220 nm |
8×8.3×0.7 mm |
SNS-C20-0808-xxx-D45-P |
500 nm |
multiple |
60% |
300 nm |
8×8.3×0.7 mm |
SNS-C20-0808-xxx-D60-P |
555.5 nm |
110 nm |
50% |
278 nm |
20×9×0.7 mm |
SNS-C18-2009-110-D50-P |
555.5 nm |
140 nm |
50% |
278 nm |
20×9×0.7 mm |
SNS-C18-2009-140-D50-P |
555.5 nm |
110 nm |
29% |
158 nm |
20×9×0.7 mm |
SNS-C18-2009-110-D29-P |
555.5 nm |
140 nm |
29% |
158 nm |
20×9×0.7 mm |
SNS-C18-2009-140-D29-P |
600 nm |
multiple |
43% |
260 nm |
8×8.3×0.7 mm |
SNS-C16.7-0808-xxx-D45-P |
600 nm |
multiple |
55% |
330 nm |
8×8.3×0.7 mm |
SNS-C16.7-0808-xxx-D55-P |
606 nm |
190 nm |
50% |
303 nm |
29×12×0.7 mm |
SNS-C16.5-2912-190-P |
606 nm |
190 nm |
50% |
303 nm |
29×12×0.7 mm |
SNS-C16.5-2912-190-S |
606 nm |
190 nm |
50% |
303 nm |
29×24.2×0.7 mm |
SNS-C16.5-2924-190-P |
675 nm |
170 nm |
32% |
218 nm |
24×10×0.7 mm |
SNS-C14.8-2410-170-P |
675 nm |
170 nm |
32% |
218 nm |
24×30.4×0.7 mm |
SNS-C14.8-2430-170-P |
700 nm |
multiple |
47% |
330 nm |
8×8.3×0.7 mm |
SNS-C14.3-0808-xxx-D45-P |
700 nm |
multiple |
55% |
375 nm |
8×8.3×0.7 mm |
SNS-C14.3-0808-xxx-D55-P |
833.3 nm |
200 nm |
50% |
416 nm |
12.5×12.5×0.7 mm |
SNS-C12-1212-200-P |
833.3 nm |
200 nm |
50% |
416 nm |
25×25×0.7 mm |
SNS-C12-2525-200-P |
2维纳米模板
Period |
Lattice type |
Groove depth |
Feature width |
Size |
Part number |
500 nm |
rect post |
multiple |
135 nm |
8×8.3×0.7 mm |
S2D-24B1-0808-xxx-P |
500 nm |
rect post |
multiple |
210 nm |
8×8.3×0.7mm |
S2D-18B1-0808-xxx-P |
600 nm |
rect post |
multiple |
195 nm |
8×8.3×0.7mm |
S2D-24B2-0808-xxx-P |
600 nm |
rect post |
multiple |
275 nm |
8×8.3×0.7mm |
S2D-18B2-0808-xxx-P |
700 nm |
rect post |
multiple |
260 nm |
8×8.3×0.7mm |
S2D-24B3-0808-xxx-P |
700 nm |
rect post |
multiple |
350 nm |
8×8.3×0.7mm |
S2D-18B3-0808-xxx-P |
500 nm |
hex post |
multiple |
165 nm |
8×8.3×0.7mm |
S2D-18C1-0808-xxx-P |
600 nm |
hex post |
multiple |
165 nm |
8×8.3×0.7mm |
S2D-24C2-0808-xxx-P |
600 nm |
hex post |
multiple |
240 nm |
8×8.3×0.7mm |
S2D-18C2-0808-xxx-P |
700 nm |
hex post |
multiple |
220 nm |
8×8.3×0.7mm |
S2D-24C3-0808-xxx-P |
700 nm |
hex post |
multiple |
290 nm |
8×8.3×0.7mm |
S2D-18C3-0808-xxx-P |
600 nm |
hex hole |
multiple |
180 nm |
8×8.3×0.7mm |
S2D-24D2-0808-xxx-P |
700 nm |
hex hole |
multiple |
200 nm |
8×8.3×0.7mm |
S2D-18D3-0808-xxx-P |
700 nm |
hex hole |
multiple |
290 nm |
8×8.3×0.7mm |
S2D-24D3-0808-xxx-P |
|